FID-550 Datasheet, Panel, Fujitsu Media Devices

FID-550 Features

• Panel
• Superior long life, using a unique construction method offering improved life over typical technologies; by sensing data input only on the glass layer, typically a 10x improve

PDF File Details

Part number:

FID-550

Manufacturer:

Fujitsu Media Devices

File Size:

320.80kb

Download:

📄 Datasheet

Description:

Resistive touch panel. Film Dent Reject Criteria Area ≥ 0.1mm2 Area ≥ 0.05mm2 & area < 0.1mm2 Area < 0.05mm2 Area > 0.1mm2 Area ≥ 0.05mm2 & area < 0.1mm2 Ar

FID-550 Application

• Applications Control IC specifications and Control PCB, complete Touch Panel Specifications are also applicable. s 3.0 DISCRIPTION AND BLOCK DIAGRAM

TAGS

FID-550

Fujitsu Media Devices

📁 Related Datasheet

FID35-06C - Fast IGBT (IXYS Corporation)
FID 35-06C Fast IGBT Chopper in ISOPLUS i4-PACTM IC25 = 38 A = 600 V VCES VCE(sat) typ. = 1.9 V 3 Preliminary data 4 1 2 1 5 IGBT Symbol VCES VG.

FID36-06D - IGBT Chopper (IXYS Corporation)
FID 36-06D IGBT Chopper in ISOPLUS i4-PACTM IC25 = 38 A = 600 V VCES VCE(sat) typ. = 1.9 V 3 Preliminary data 4 1 1 2 5 IGBT Symbol VCES VGES I.

FID3Z1KX - InGaAs PIN PhotoDiode (Fujitsu)
w w w .d e e h s a t a . u t4 m o c .. .

FID3Z1KX - PIN Photodiode (Eudyna Devices)
PIN Photodiode FEATURES • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm.

FID3Z1LX - InGaAs PIN PhotoDiode (Fujitsu)
w w w .d e e h s a t a . u t4 m o c .. .

FID3Z1LX - PIN Photodiode (Eudyna Devices)
PIN Photodiode FEATURES • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm.

FID3Z2KX - PIN Photodiode (Eudyna Devices)
PIN Photodiode FEATURES • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm.

FID3Z2LX - PIN Photodiode (Eudyna Devices)
PIN Photodiode FEATURES • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm.

FID50-12BD - Bidirectional Switch (IXYS Corporation)
Advanced Technical Information Bidirectional Switch with IGBT and fast Diode Bridge in ISOPLUS i4-PACTM FIO 50-12BD IC25 VCES VCE(sat) typ. = 50 A .

FID60-06D - IGBT Boost Chopper (IXYS)
IGBT Boost Chopper in ISOPLUS i4-PAC™ FID 60-06D IC25 = 65 A VCES = 600 V VCE(sat) typ. = 1.6 V 3 4 1 E72873 2 IGBT Symbol VCES VGES IC25 IC.