FID50-12BD Datasheet (IXYS Corporation)

FID50-12BD, Bidirectional Switch

Advanced Technical Information Bidirectional Switch with IGBT and fast Diode Bridge in ISOPLUS i4-PACTM FIO 50-12BD IC25 VCES VCE(sat) typ.

= 50 A = 1200 V = 2.0 V 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 50 32 50 VCES 10 200 V V A A A µs W Feat

FID50-12BD Features

* IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits

* HiPerFREDTM diodes - fast reverse recovery - low operating forward voltage - low leakage current

* IS