D80AN2, D80AM2 Datasheet - GE

D80AN2 FIELD EFFECT POWER TRANSISTOR

~~o~~~u FIELD EFFECT POWER TRANSISTOR D80AM2,N2 0.32 AMPERES 150,200 VOLTS RDS(ON) = 5.0 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good .

D80AN2 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D80AM2-GE.pdf

D80AN2 Datasheet Preview — This datasheet PDF includes multiple part numbers: D80AN2, D80AM2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

D80AN2, D80AM2

Manufacturer:

File Size:

192.75 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: D80AN2, D80AM2.
Please refer to the document for exact specifications by model.

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D80AN2 D80AM2 FIELD EFFECT POWER TRANSISTOR GE

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