D80AN2, D80AM2 Datasheet - GE

D80AN2, D80AM2, FIELD EFFECT POWER TRANSISTOR

~~o~~~u FIELD EFFECT POWER TRANSISTOR D80AM2,N2 0.32 AMPERES 150,200 VOLTS RDS(ON) = 5.0 n This series of N-Channel Enhancement-mode Power MOSFETs u.

Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

D80AM2-GE.pdf