D84DM2, D84DN2 Datasheet - GE

D84DM2 FIELD EFFECT POWER TRANSISTOR

~D~~U FIELD EFFECT POWER TRANSISTOR IRF630,631 D84DN2,M2 9.0 AMPERES 200, 150 VOLTS RDS(ON) = 0.4 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area w.

D84DM2 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D84DN2-GE.pdf

D84DM2 Datasheet Preview — This datasheet PDF includes multiple part numbers: D84DM2, D84DN2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

D84DM2, D84DN2

Manufacturer:

File Size:

196.92 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: D84DM2, D84DN2.
Please refer to the document for exact specifications by model.

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D84DM2 D84DN2 FIELD EFFECT POWER TRANSISTOR GE

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