D84DR1, D84DR2 Datasheet - GE

D84DR1 FIELD EFFECT POWER TRANSISTOR

~D~~~LF FIELD EFFECT POWER TRANSISTOR IRF830,831 D84DR2,R1 4.5 AMPERES 500, 450 VOLTS ~DS(ON) =1.5.0. This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area.

D84DR1 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D84DR2-GE.pdf

D84DR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: D84DR1, D84DR2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

D84DR1, D84DR2

Manufacturer:

File Size:

203.49 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: D84DR1, D84DR2.
Please refer to the document for exact specifications by model.

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D84DR1 D84DR2 FIELD EFFECT POWER TRANSISTOR GE

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