D86FN2 Datasheet - GE

D86FN2 FIELD EFFECT POWER TRANSISTOR

~D~[P~ FIELD EFFECT POWER TRANSISTOR IRF250,251 D86FN2,M2 30 AMPERES 200, 150 VOLTS ROS(ON) =Q.085 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE',s advanCed Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area.

D86FN2 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D86FN2 Datasheet (208.85 KB)

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Datasheet Details

Part number:

D86FN2

Manufacturer:

File Size:

208.85 KB

Description:

Field effect power transistor.

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