* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D86FQ1
GE
188.45 KB
Field effect power transistor.
~D~[P~
FIELD EFFECT POWER TRANSISTOR
IRF350,351 D86FQ2,Q1
15AMPERE5 400, 350 VOLT5
R05(ON) =0.3 il
This series of N-Channel Enhancement-mode Power M.
📁 Related Datasheet
D86FQ2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[P~
FIELD EFFECT POWER TRANSISTOR
IRF350,351 D86FQ2,Q1
15AMPERE5 400, 350 VOLT5
R05(ON) =0.3 il
This series of N-Channel Enhancement-mode Power M.
D86FK2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~~
FIELD EFFECT POWER TRANSISTOR
IRF150,151 D86FL2,K2
40 AMPERES 100,60 VOLTS ROS(ON) = 0.055 il
This series of N:-Channel Enhancement-mode Power
.
D86FL2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~~
FIELD EFFECT POWER TRANSISTOR
IRF150,151 D86FL2,K2
40 AMPERES 100,60 VOLTS ROS(ON) = 0.055 il
This series of N:-Channel Enhancement-mode Power
.
D86FM2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[P~
FIELD EFFECT POWER TRANSISTOR
IRF250,251 D86FN2,M2
30 AMPERES 200, 150 VOLTS
ROS(ON) =Q.085 0
This series of N-Channel Enhancement-mode Power.
D86FN2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[P~
FIELD EFFECT POWER TRANSISTOR
IRF250,251 D86FN2,M2
30 AMPERES 200, 150 VOLTS
ROS(ON) =Q.085 0
This series of N-Channel Enhancement-mode Power.
D86FR1 - FIELD EFFECT POWER TRANSISTOR
(GE)
~o~~u
FIELD EFFECT POWER TRANSISTOR
IRF450,451 D86FR2,R1
13 AMPERES 500, 450 VOLTS ROS(ON) = 0.4 il
This series of N-Channel Enhancement-mode Power .
D86FR2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~o~~u
FIELD EFFECT POWER TRANSISTOR
IRF450,451 D86FR2,R1
13 AMPERES 500, 450 VOLTS ROS(ON) = 0.4 il
This series of N-Channel Enhancement-mode Power .
D862 - 2SD862
(Wing Shing Computer Components)
2SD862
GENERAL DESCRIPTION
Silicon Epitaxial Planar Transistor
Silicon NPN high frequency, Low Vce(sat) middle power transistors in a plastic envelo.
