D86FQ1 Datasheet - GE

D86FQ1 FIELD EFFECT POWER TRANSISTOR

~D~[P~ FIELD EFFECT POWER TRANSISTOR IRF350,351 D86FQ2,Q1 15AMPERE5 400, 350 VOLT5 R05(ON) =0.3 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area wi.

D86FQ1 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D86FQ1 Datasheet (188.45 KB)

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Datasheet Details

Part number:

D86FQ1

Manufacturer:

File Size:

188.45 KB

Description:

Field effect power transistor.

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D86FQ1 FIELD EFFECT POWER TRANSISTOR GE

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