D88FN2 Datasheet - GE

D88FN2 FIELD EFFECT POWER TRANSISTOR

~o~~LF FIELD EFFECT POWER TRANSISTOR IRF~250,251 D88FN2!M2 30 AMPERES 200, 150 VOLTS ROS(ON) =0.085 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the. extended safe operating are.

D88FN2 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* . Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D88FN2 Datasheet (194.93 KB)

D88FN2 Datasheet Preview — Preview of D88FN2 PDF

Datasheet Details

Part number:

D88FN2

Manufacturer:

File Size:

194.93 KB

Description:

Field effect power transistor.

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D88FN2 FIELD EFFECT POWER TRANSISTOR GE

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