* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D88FQ1
GE
187.56 KB
Field effect power transistor.
~D~[P~lf
FIELD EFFECT POWER TRANSISTOR
IRFP350,351 D88FQ2.Q1
15 AMPERES 400, 350 VOLTS
ROS(ON) =0.3 n
This series of N-Channel Enhancement-mode Powe.
📁 Related Datasheet
D88FQ2 - FIELD EFFECT POWER TRANSISTOR
(GE)
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FIELD EFFECT POWER TRANSISTOR
IRFP350,351 D88FQ2.Q1
15 AMPERES 400, 350 VOLTS
ROS(ON) =0.3 n
This series of N-Channel Enhancement-mode Powe.
D88FK2 - FIELD EFFECT POWER TRANSISTOR
(GE)
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FIELD EFFECT POWER TRANSISTOR
IRFP150,151 D88FL2,K2
40 AMPERES 100, 60 VOLTS
ROS(ON) =0.055 n
This series of N-Channel Enhancement-mode Power .
D88FL2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~o~~~
FIELD EFFECT POWER TRANSISTOR
IRFP150,151 D88FL2,K2
40 AMPERES 100, 60 VOLTS
ROS(ON) =0.055 n
This series of N-Channel Enhancement-mode Power .
D88FM2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~o~~LF
FIELD EFFECT POWER TRANSISTOR
IRF~250,251
D88FN2 M2
30 AMPERES 200, 150 VOLTS
ROS(ON) =0.085 n
This series of N-Channel Enhancement-mode Powe.
D88FN2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~o~~LF
FIELD EFFECT POWER TRANSISTOR
IRF~250,251
D88FN2 M2
30 AMPERES 200, 150 VOLTS
ROS(ON) =0.085 n
This series of N-Channel Enhancement-mode Powe.
D88FR1 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[P~U
FIELD EFFECT POWER TRANSISTOR
IRFP451 ~450 D88FR1,R2
13 AMPERES 450, 500 VOLTS
ROS(ON) =0.4 n
This series of N-Channel Enhancement-mode Powe.
D88FR2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[P~U
FIELD EFFECT POWER TRANSISTOR
IRFP451 ~450 D88FR1,R2
13 AMPERES 450, 500 VOLTS
ROS(ON) =0.4 n
This series of N-Channel Enhancement-mode Powe.
D880 - NPN Transistor
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SD880
NPN SILICON TRANSISTOR
NPN EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC 2SD880 is designed for audio frequency.
