0105-50
GHz TECHNOLOGY
145.38kb
Rf transistor. The 0105-50 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 100-500 MHz frequency
📁 Related Datasheet
010NE2LS - MOSFET
(Infineon)
BSC010NE2LS
MOSFET
OptiMOSTM Power-MOSFET, 25 V
Features
• Optimized for high performance Buck converter • Very low on-resistance RDS(on) @ VGS=4.5 V.
011N40P1 - KHB011N40P1
(KEC)
.DataSheet.co.kr
SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB011N40P1/F1/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB011N40P1
A O C F E .
012N08N5 - MOSFET
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IPT012N08N5
MOSFET
OptiMOSTM 5 Power-Transistor, 80 V
Features
• Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) .
01304C6 - MOSFET
(Infineon)
IQE013N04LM6CG
MOSFET
OptiMOSTM Power-MOSFET, 40 V
Features
• Optimized for synchronous rectification • Very low on-state resistance RDS(on) • 100% a.
014400J1 - IBM014400J1
(IBM Microelectronics)
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014N04LS - MOSFET
(Infineon)
BSC014N04LS
MOSFET
OptiMOSTM Power-MOSFET, 40 V
Features
• Optimized for synchronous rectification • Very low on-state resistance RDS(on) • 100% aval.
014N06SC - MOSFET
(Infineon)
BSC014N06NSSC
MOSFET
OptiMOSTM Power-Transistor, 60 V
Features
• Double side cooled package-with lowest Junction-top thermal resistance • 175°C rated.
0150SC-1250M - Silicon Carbide SIT
(Microsemi)
0150SC-1250M Rev B
0150SC-1250M
1250Watts, 125 Volts, Class AB 150 to 160 MHz
Silicon Carbide SIT
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The .
0154003.DR - 154 Series Very Fast Acting Fuses
(ETC)
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015AZ10 - Silicon Diode
(Toshiba Semiconductor)
015AZ2.0~015AZ12
TOSHIBA Diode Silicon Epitaxial Planar Type
015AZ2.0~015AZ12
Constant Voltage Regulation Applications
Unit: mm
l Small package l N.
Stock and price
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