0105-50 Datasheet, transistor equivalent, GHz TECHNOLOGY

PDF File Details

Part number: 0105-50

Manufacturer: GHz TECHNOLOGY

File Size: 145.38KB

Download: 📄 Datasheet

Description: RF Transistor

Datasheet Preview: 0105-50 📥 Download PDF (145.38KB)

0105-50 Application

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Dr.

0105-50 Description

The 0105-50 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 100-500 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused resistors ensure ruggedness and hi.

Image gallery

Page 2 of 0105-50 Page 3 of 0105-50

TAGS

0105-50
Transistor
GHz TECHNOLOGY

📁 Related Datasheet

010NE2LS - MOSFET (Infineon)
BSC010NE2LS MOSFET OptiMOSTMPower-MOSFET,25V Features •OptimizedforhighperformanceBuckconverter •Verylowon-resistanceRDS(on)@VGS=4.5V.

011N40P1 - KHB011N40P1 (KEC)
www.DataSheet.co.kr SEMICONDUCTOR TECHNICAL DATA General Description KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB011N40P1 A O C F E .

012N08N5 - MOSFET (Infineon)
IPT012N08N5 MOSFET OptiMOSTM5Power-Transistor,80V Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on).

01304C6 - MOSFET (Infineon)
IQE013N04LM6CG MOSFET OptiMOSTMPower-MOSFET,40V Features •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100%a.

014400J1 - IBM014400J1 (IBM Microelectronics)
www..com www..com www..com www..com www..com www..com www..com www.

014N04LS - MOSFET (Infineon)
BSC014N04LS MOSFET OptiMOSTMPower-MOSFET,40V Features •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100%aval.

014N06SC - MOSFET (Infineon)
BSC014N06NSSC MOSFET OptiMOSTMPower-Transistor,60V Features •Doublesidecooledpackage-withlowestJunction-topthermalresistance •175°Crated.

0150SC-1250M - Silicon Carbide SIT (Microsemi)
0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The .

0154003.DR - 154 Series Very Fast Acting Fuses (ETC)
www..com .

015AZ10 - Silicon Diode (Toshiba Semiconductor)
015AZ2.0~015AZ12 TOSHIBA Diode Silicon Epitaxial Planar Type 015AZ2.0~015AZ12 Constant Voltage Regulation Applications Unit: mm l Small package l N.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts