1N5367B
GME
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Zener diode.
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1N5367 - 5W SILICON PLANAR ZENER DIODES
(JINAN JINGHENG)
R SEMICONDUCTOR
1N5342 THRU 1N5388
5W SILICON PLANAR ZENER DIODES
FEATURES
Low leakage, low zener impedance at low current Maximum power dissipation.
1N5367 - 5.OWATT SURMETIC 40 SILICON ZENER DIODES
(Motorola)
INS333 thru INS388
® MOTOROLA
Dp -'ii~T1PI' -'i Data S h p p t
S.O WATT SURMETIC 40 SILICON ZENER DIODES (SILICON OXIDE PASSIVATED)
· a p.
1N5367 - 5.OWATT SURMETIC 40 SILICON ZENER DIODES
(Motorola)
INS333 thru INS388
® MOTOROLA
Dp -'ii~T1PI' -'i Data S h p p t
S.O WATT SURMETIC 40 SILICON ZENER DIODES (SILICON OXIDE PASSIVATED)
· a p.
1N5367A - SILICON ZENER DIODE
(EIC)
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
1N5338A - 1N5388A
SILICON ZENER DIODES
DO-15
VZ : 5.1 - 200 Volts PD : 5 Watts
FEATURES :
* Compl.
1N5367B - Silicon Zener Diode
(Motorola)
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
5 Watt Surmetic 40 Silicon Zener Diodes
This is a plete series of 5 Watt Zener Diodes with tight limits and b.
1N5367B - 5.0W ZENER DIODE
(WON-TOP)
®
WON-TOP ELECTRONICS
Features
Glass Passivated Die Construction 5.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5% Standard Vz Toler.
1N5367B - Zener Diode
(NTE)
1N5333B thru 1N5388B Zener Diode, 5 Watt 5% Tolerance
Features: D Zener Voltage: 3.3V to 200V
D High Surge Current Capability
Absolute Maximum Rati.
1N5367B - Silicon 5 Watt Zener Diodes
(Microsemi)
1N5333B thru 1N5388B
Available
Silicon 5 Watt Zener Diodes
DESCRIPTION
The 1N5333B through 1N5388B JEDEC registered series of axial-leaded 5.0 watt.
1N5367B - 5W ZENER DIODE
(Diodes Incorporated)
1N5344B - 1N5388B
5W ZENER DIODE Features
· · · · · · Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Vo.
1N5367B - Zener Diode
(Eris)
1N53xxB
1.0 (25.4) MIN.
.052 (1.3) DIA.
.048 (1.2)
5W Zener Diode
.375 (9.5) .335 (8.5)
1.0 (25.4) MIN.
.220 (5.6) DIA.
.197 (5.0)
Ordering Info.
