z RDS(on)=5.0Ω@VGS=10V. Pb
z Ultra Low gate charge (typical 9.0nC) Lead-free
z Low reverse transfer capacitance (Crss = typical 5.0 pF)
z Fast switching capability
z Avalanche energy specified
z Improved dv/dt capability, high ruggedness
2N65
TO-251 TO-252.
📁 2N65 Similar Datasheet
2N65-C - N-CHANNEL POWER MOSFET(Unisonic Technologies)