2SC2411 - Silicon Transistor

Datasheet Summary

Features

Power dissipation: PCM=200Mw.
High ICM(MAX. ),I CM(MAX. )=0.5mA.
Low VCE(sat)。.
Complements the 2SA1036. Pb Lead-free 2SC2411.

GME

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Datasheet Details

Part number	2SC2411
Manufacturer	GME
File Size	231.66 KB
Description	Silicon Transistor
Datasheet	2SC2411 Datasheet
Additional preview pages of the 2SC2411 datasheet.

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Full PDF Text Transcription

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Production specification Silicon Epitaxial Planar Transistor FEATURES  Power dissipation: PCM=200Mw.  High ICM(MAX.),I CM(MAX.)=0.5mA.  Low VCE(sat)。  Complements the 2SA1036. Pb Lead-free 2SC2411 APPLICATIONS  NPN Silicon Epitaxial Planar Transistor. ORDERING INFORMATION Type No. Marking 2SC2411 CP/CQ/CR SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 32 5 500 200 -55 to+150 Units V V V mA mW ℃ C097 Rev.A www.gmesemi.

Published: Apr 15, 2018 |