SS8050 Datasheet | Galaxy Microelectronics

FEATURES z Collector Current.(IC= 1.5A） z plementary To SS8550. Pb Lead-free z Collector dissipation:PC=300m W(TC=25℃) APPLICATIONS z High Collector Current. Production specification ORDERING INFORMATION Type No. Marking Y1 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Ratings VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 40 25 6 1.5 300 -55 to +150 Units V V V A m W ℃ C086 Rev.A .gmicroelec. 1 Production specification Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=2m A,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 Col...