21N06 MOSFET

21N06 Description

GOFORD .
The 21N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

21N06 Features

* VDSS R DS(ON) ID @ 10V (typ) 60V 24 m Ω 21 A
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technology for h

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21N06 Datasheet Preview — Preview of 21N06 PDF

Datasheet Details

Part number: 21N06
Manufacturer: GOFORD
File Size: 1.39 MB
Datasheet: 21N06-GOFORD.pdf
Description: MOSFET

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MOSFET GOFORD

GOFORD 21N06-like datasheet