*
VDSS R DS(ON) ID
@ 10V (typ)
60V
24 m Ω
21 A
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Go.
GENERAL FEATURES
*
VDSS R DS(ON) ID
@ 10V (typ)
60V
24 m Ω
21 A
* High density cell design for ultra low R.
The 21N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
*
VDSS R DS(ON) ID
@ 10V (typ)
60V
24 m Ω
21 A
* High density cell.
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