21N05L, Infineon
SPD 21N05L
SIPMOS® Power Transistor
Features • N channel • Enhancement mode • Avalanche rated
Product Summary Drain source voltage Drain-Source on-.
21N06, GOFORD
GOFORD
DESCRIPTION
The 21N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v.
21N150K5, STMicroelectronics
STW21N150K5
N-channel 1500 V, 0.7 Ω typ.,14 A MDmesh™ K5 Power MOSFET in a TO-247 package
Datasheet - production data
3 2 1
TO-247
Figure 1: Interna.
