G1NP02, G1NP02ELL - N and P Channel Enhancement Mode Power MOSFET

The G1NP02 by GOFORD is a N and P Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	G1NP02, G1NP02ELL
Manufacturer	GOFORD
File Size	554.33 KB
Description	N and P Channel Enhancement Mode Power MOSFET
Datasheet	G1NP02ELL-GOFORD.pdf
Note	This datasheet PDF includes multiple part numbers: G1NP02, G1NP02ELL. Please refer to the document for exact specifications by model.
Additional preview pages of the G1NP02 datasheet.

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

NMOS.
VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
RDS(ON) (at VGS = 2.5V).
RDS(ON) (at VGS = 1.8V) 20V 1.36A < 375mΩ < 450mΩ < 800mΩ.
PMOS.
VDS.
ID (at VGS = -10V).
RDS(ON) (at VGS = -4.5V).
RDS(ON) (at VGS = -2.5V).
RDS(ON) (at VGS = -1.8V).
100% Avalanche Tested.
RoHS Compliant.
ESD (HBM)>2.0KV -20V -1.15A < 520mΩ < 700mΩ < 1000mΩ Schematic diagram Marking and pin assignment.

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Published: Nov 3, 2024 |