Part number:
G1NP02
Manufacturer:
GOFORD
File Size:
554.33 KB
Description:
N and p channel enhancement mode power mosfet.
* NMOS
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* RDS(ON) (at VGS = 2.5V)
* RDS(ON) (at VGS = 1.8V) 20V 1.36A < 375mΩ < 450mΩ < 800mΩ
* PMOS
* VDS
* ID (at VGS = -10V)
* RDS(ON) (at VGS = -4.5V)
* RDS(ON) (at VGS = -2.5V)
* RDS(ON) (at VGS
G1NP02
GOFORD
554.33 KB
N and p channel enhancement mode power mosfet.
📁 Related Datasheet
G1NP02ELL N and P Channel Enhancement Mode Power MOSFET (GOFORD)
G1000LL250 Anode-Shorted Gate Turn-Off Thyristor (IXYS)
G1000LM250 Anode-Shorted Gate Turn-Off Thyristor (IXYS)
G1000NC450 Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000NL450 Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000QC250 Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000QC400 Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000QC450 Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1002 N-Channel Enhancement Mode Power MOSFET (GOFORD)
G1003A N-Channel Enhancement Mode Power MOSFET (GFD)