Name: G1NP02ELL
SKU: G1NP02ELL-1550162

The G1NP02ELL by GOFORD is a N and P Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	G1NP02ELL
Manufacturer	GOFORD
File Size	554.33 KB
Description	N and P Channel Enhancement Mode Power MOSFET
Datasheet	G1NP02ELL-GOFORD.pdf
Additional preview pages of the G1NP02ELL datasheet.

G1NP02ELL Product details

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

NMOS.
VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
RDS(ON) (at VGS = 2.5V).
RDS(ON) (at VGS = 1.8V) 20V 1.36A < 375mΩ < 450mΩ < 800mΩ.
PMOS.
VDS.
ID (at VGS = -10V).
RDS(ON) (at VGS = -4.5V).
RDS(ON) (at VGS = -2.5V).
RDS(ON) (at VGS = -1.8V).
100% Avalanche Tested.
RoHS Compliant.
ESD (HBM)>2.0KV -20V -1.15A < 520mΩ < 700mΩ < 1000mΩ Schematic diagram Marking and pin assignment.