G35N02 Features
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* RDS(ON) (at VGS = 2.5V)
* 100% Avalanche Tested
* RoHS Compliant 20V 35A < 13mΩ < 18mΩ Application
* Power switch
* DC/DC converters Schematic diagram TO-252 Device G35N02K Package TO-252 Marking G35N02 Pac
Datasheet Details
G35N02, G35N02K
GOFORD
646.04 KB
N-channel enhancement mode power mosfet.
This datasheet PDF includes multiple part numbers: G35N02, G35N02K.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
G35N02K N-Channel Enhancement Mode Power MOSFET (GOFORD)
G35160 35A HIGH VOLTAGE GLASS PASSIVATED CELL DIODE (Won-Top Electronics)
G35P04 P-Channel Enhancement Mode Power MOSFET (GOFORD)
G35P04D5 P-Channel Enhancement Mode Power MOSFET (GOFORD)
G30 Voltage-Controlled Attenuator Module (MACOM)
G3000TF250 Anode Shorted Gate Turn-Off Thyristor (IXYS)
G3000TF450 Anode Shorted Gate Turn-Off Thyristor (IXYS)
G300N04 N-Channel Enhancement Mode Power MOSFET (GOFORD)
G35N02 Distributor
