G35160 Datasheet, Diode, Won-Top Electronics

PDF File Details

Part number:

G35160

Manufacturer:

Won-Top Electronics

File Size:

26.07kb

Download:

📄 Datasheet

Description:

35a high voltage glass passivated cell diode.

TAGS

📁 Related Datasheet

G35N02 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G35N02K N-Channel Enhancement Mode Power MOSFET Description The G35N02K uses advanced trench technology to provide excellent RDS(ON) , low gate cha.

G35N02K - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G35N02K N-Channel Enhancement Mode Power MOSFET Description The G35N02K uses advanced trench technology to provide excellent RDS(ON) , low gate cha.

G35P04 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G35P04D5 P-Channel Enhancement Mode Power MOSFET Description The G35P04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G35P04D5 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G35P04D5 P-Channel Enhancement Mode Power MOSFET Description The G35P04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G30 - Voltage-Controlled Attenuator Module (MACOM)
G30/SMG30 Voltage-Controlled Attenuator Module 100 to 2000 MHz Rev. V3 Features  FAST SWITCHING: < 0.2 µsec, 10 TO 90% (TYP.) < 1 µsec, 0 TO 100% .

G3000TF250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
Date:- 5th March 2013 Data Sheet Issue:- A1 Anode Shorted Gate Turn-Off Thyristor Types G3000TF250 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM.

G3000TF450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
Date:- 28th April 2013 Data Sheet Issue:- 2 Anode Shorted Gate Turn-Off Thyristor Types G3000TF450 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM.

G300N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04L N-Channel Enhancement Mode Power MOSFET Description The G300N04L uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G300N04D3 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04D3 N-Channel Enhancement Mode Power MOSFET Description The G300N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate .

G300N04L - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04L N-Channel Enhancement Mode Power MOSFET Description The G300N04L uses advanced trench technology to provide excellent RDS(ON) , low gate ch.