G7P03D2

P-Channel Enhancement Mode Power MOSFET

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Goford Semiconductor	G7P03D2	P-30V,-7A,RD(MAX)<20.5M@-10V,VTH	DigiKey	0	75000 units	$0.08	🛒 Buy Now

Download Datasheet (445.00 KB)

G7P03D2 Datasheet Preview — Preview of G7P03D2 Datasheet

Datasheet Details

Part number:

G7P03D2

Manufacturer:

GOFORD

File Size:

445.00 KB

Description:

P-channel enhancement mode power mosfet.
GOFORD G7P03D2 P-Channel Enhancement Mode Power MOSFET Description The G7P03D2 uses advanced tre.
The G7P03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can .

✔ G7P03D2 Features

VDS
ID (at VGS = -10V)
RDS(ON) (at VGS = -10V)
RDS(ON) (at VGS = -4.5V)
100% Avalanche Tested
RoHS Compliant Application -30V -7A < 20.5mΩ < 26mΩ
Synchro

✔ G7P03D2 Application

General Features
VDS
ID (at VGS = -10V)
RDS(ON) (at VGS = -10V)
RDS(ON) (at VGS = -4.5V)
100% A

📁 Related Datasheet

G7P03 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
GOFORD G7P03D2 P-Channel Enhancement Mode Power MOSFET Description The G7P03D2 uses advanced trench technology to provide excellent RDS(ON) , low .

G7P03L - P-Channel Enhancement Mode Power MOSFET (GOFORD)
GOFORD G7P03L P-Channel Enhancement Mode Power MOSFET Description The G7P03L uses advanced trench technology to provide excellent RDS(ON) , low ga.

G7PH42U-EP - IRG7PH42U-EP (International Rectifier)
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square.

G700P06 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G700P06LL P-Channel Enhancement Mode Power MOSFET Description The G700P06LL uses advanced trench technology to provide excellent RDS(ON) , low gate .

G700P06J - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G700P06J P-Channel Enhancement Mode Power MOSFET Description The G700P06J uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G700P06LL - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G700P06LL P-Channel Enhancement Mode Power MOSFET Description The G700P06LL uses advanced trench technology to provide excellent RDS(ON) , low gate .

TAGS

G7P03D2 P-Channel Enhancement Mode Power MOSFET GOFORD

Image Gallery

Datasheet Details

File Size:

Description:

✔ G7P03D2 Features

✔ G7P03D2 Application

G7P03D2 Distributor