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G7PH42U-EP IRG7PH42U-EP

G7PH42U-EP Description

INSULATED GATE BIPOLAR TRANSISTOR .

G7PH42U-EP Features

* Low VCE (ON) trench IGBT technology
* Low switching losses
* Maximum junction temperature 175 °C
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) temperature co-efficient
* Tight parameter distribution
* Lead -Fre

G7PH42U-EP Applications

* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation Applications
* U. P. S
* Welding
* Solar inverter

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IRG7PH42U-EP International Rectifier
International Rectifier G7PH42U-EP-like datasheet