XM2N200 Datasheet, Mosfet, GOFORD

XM2N200 Features

• Mosfet
• VDSS RDS(ON) ID @ 10V (typ) 190V 356.6mΩ 2A
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

XM2N200

Manufacturer:

GOFORD

File Size:

2.84MB

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📄 Datasheet

Description:

N-channel power mosfet. The XM2N200 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

XM2N200 Application

• Applications General Features
• VDSS RDS(ON) ID @ 10V (typ) 190V 356.6mΩ 2A
• High density cell design for ultra low Rdson <

TAGS

XM2N200

GOFORD

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