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XM2N200 N-Channel Power MOSFET

XM2N200 Description

GOFORD .
The XM2N200 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

XM2N200 Features

* VDSS RDS(ON) ID @ 10V (typ) 190V 356.6mΩ 2A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellent package for good heat dissipation

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Datasheet Details

Part number
XM2N200
Manufacturer
GOFORD
File Size
2.84 MB
Datasheet
XM2N200-GOFORD.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET GOFORD
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