Description
GSGG1050 100V N-Channel MOSFET Main Product Characteristics D VDS 100V RDS(ON) ID 10.8mΩ 50A .
The GSGG1050 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter
Symbol
Max. Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Drain Current-Continuous(TC=25°C) Drain Current-Continuous(TC=100°C) Drain Current-Pulsed1 Power Dissipation (TC=25°C) Power Dissipation
* De