Description
Main Product Characteristics BVDSS 65V DD DD GSGN0648 65V N-Channel MOSFET D RDS(ON) ID 8.5mΩ 48A S S SG .
The GSGN0648 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* PPAK3x3
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter
Symbol
Max. Drain-Source Voltage
VDS
65
Gate-Source Voltage
VGS
±20
Drain Current-Continuous (TC=25°C); Silicon Limited
48
Drain Current-Continuous (TC=100°C); Silicon Limited ID
Drain Current-Continuous (TC=25°C);