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SSF18N50F, SSF18N50F-GOOD 500V N-Channel MOSFET

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Description

Main Product Characteristics VDSS 500V RDS(on) 0.22ohm(typ.) ID 18A .
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

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This datasheet PDF includes multiple part numbers: SSF18N50F, SSF18N50F-GOOD. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
SSF18N50F, SSF18N50F-GOOD
Manufacturer
GOOD-ARK
File Size
1.11 MB
Datasheet
SSF18N50F-GOOD-ARK.pdf
Description
500V N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: SSF18N50F, SSF18N50F-GOOD.
Please refer to the document for exact specifications by model.

Features

* TO- 220F
* Advanced Process Technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating temperature

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