SSF1007 MOSFET

Silikron

Description

Main Product Characteristics: SSF1007 VDSS RDS(on) ID 100V 5.8mohm（Typ） 130A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.

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Datasheet Specifications

Part number: SSF1007
Manufacturer: Silikron
File Size: 381.00 KB
Datasheet: SSF1007-Silikron.pdf
Description: MOSFET

Features

* SSF1007 TOP View (TO220)
* Advanced trench MOSFET process technology
* Special designed for convertors and power controls
* Ultra low on-resistance
* 175℃ operating temperature

Applications

* Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear derating factor G

SSF1007 Distributors

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