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SSF1007 - MOSFET

SSF1007 Description

                                 Main Product Characteristics: SSF1007  VDSS RDS(on) ID 100V 5.8mohm（Typ） 130A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.

SSF1007 Features

* SSF1007 TOP View (TO220)
* Advanced trench MOSFET process technology
* Special designed for convertors and power controls
* Ultra low on-resistance
* 175℃ operating temperature

SSF1007 Applications

* Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear derating factor G

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Datasheet Details

Part number
SSF1007
Manufacturer
Silikron
File Size
381.00 KB
Datasheet
SSF1007-Silikron.pdf
Description
MOSFET

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MOSFET Silikron
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