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SSF10N60 N-Channel MOSFET

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Description

Main Product Characteristics: VDSS RDS(on) 600V 0.69Ω (typ.) ID 10A .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

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Datasheet Specifications

Part number
SSF10N60
Manufacturer
SILIKRON
File Size
504.33 KB
Datasheet
SSF10N60-SILIKRON.pdf
Description
N-Channel MOSFET

Features

* TO-220
* Advanced MOSFET process technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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