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SSF10N90F1 - MOSFET

SSF10N90F1 Description

Main Product Characteristics: VDSS 900V RDS(on) 0.85Ω(typ.) ID 10A ① .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

SSF10N90F1 Features

* Advanced MOSFET process technology
* Low On Resistance
* Low Gate Charge

SSF10N90F1 Applications

* Absolute max Rating: Symbol ID @ TC = 25℃ ID @ TC = 100℃ IDM PD @TC = 25℃ VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ① Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Si

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MOSFET Silikron Semiconductor
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