Datasheet Details
- Part number
- SSF10N90F1
- Manufacturer
- SilikrON Semiconductor ↗
- File Size
- 330.96 KB
- Datasheet
- SSF10N90F1-SilikronSemiconductor.pdf
- Description
- MOSFET
SSF10N90F1 Description
Main Product Characteristics: VDSS 900V RDS(on) 0.85Ω(typ.) ID 10A ① .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
SSF10N90F1 Features
* Advanced MOSFET process technology
* Low On Resistance
* Low Gate Charge
SSF10N90F1 Applications
* Absolute max Rating:
Symbol ID @ TC = 25℃ ID @ TC = 100℃ IDM
PD @TC = 25℃
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V ① Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Si
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