SSF10N60A
Samsung Electronics
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Advanced power mosfet.
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SSF10N60 - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS RDS(on)
600V 0.69Ω (typ.)
ID 10A
Features and Benefits:
TO-220
Advanced MOSFET process technology Special.
SSF10N60B - 600V N-Channel MOSFET
(Fairchild Semiconductor)
SSF10N60B
November 2001
SSF10N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are prod.
SSF10N60F - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS
600V
RDS(on) 0.69ohm(typ.)
ID 10A
Features and Benefits:
TO220F
Advanced MOSFET process technology Speci.
SSF10N65 - 650V N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
650V
RDS(on) 0.9Ω (typ.)
ID 10A Features and Benefits
TO-220
Advanced MOSFET process technology Special de.
SSF10N80A - Advanced Power MOSFET
(Samsung Electronics)
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SSF10N90A - Advanced Power MOSFET
(Samsung Electronics)
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SSF10N90F1 - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
VDSS
900V
RDS(on) 0.85Ω(typ.)
ID 10A ①
Features and Benefits:
Advanced MOSFET process technology Low On Resista.
SSF1006 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
100V 4.6mΩ (typ.)
ID 200A ①
Features and Benefits:
TO220
Advanced MOSFET process technology Speci.
SSF1006A - MOSFET
(Silikron)
SSF1006A
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current
ID =200A B.
SSF1006H - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
100V 5mΩ (typ.)
ID 200A ①
Features and Benefits:
TO-247
Advanced MOSFET process technology Specia.
