SSF45N20A
Samsung Electronics
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Advanced power mosfet.
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SSF45N20B - 200V N-Channel MOSFET
(Fairchild Semiconductor)
SSF45N20B
November 2001
SSF45N20B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are prod.
SSF4004 - MOSFET
(Silikron Semiconductor)
SSF4004
Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low .
SSF4004S - MOSFET
(Silikron Semiconductor)
Main Product Characteristics
VDSS
40V
RDS(on) 2.3mΩ (typ.)
ID 180A ①
Features and Benefits
TO-220
Advanced MOSFET process technology Specia.
SSF4006 - MOSFET
(Silikron Semiconductor)
SSF4006
Feathers:
ID =160A
Advanced trench process technology
BV=40V
avalanche energy, 100% test
Rdson=0.005Ω
Fully characterized avalanc.
SSF4008J7L - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
40V
RDS(on) 6.9mΩ(typ.)
ID
68A
PQFN 5x6-8L
Features and Benefits:
Advanced MOSFET process technology Spe.
SSF4008J8L - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
40V
RDS(on) 6.9mΩ (typ.)
ID
68A
PDFN 3*3-8L
Main Features
Advanced MOSFET process technology Special des.
SSF4013H1 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-40V
RDS(on) 11.6mΩ (typ.)
ID
-13A ①
SOP-8
Features and Benefits:
Advanced MOSFET process technology Spe.
SSF4013J7 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-40V
RDS(on) ID
10mΩ (typ.) -25A ①
PDFN 5x6-8L
SSF4013J7
Pin Assignments
Schematic Diagram
Features and Be.
SSF4013J8 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-40V
RDS(on) 11.6mΩ (typ.)
ID
-13A ①
PDFN 3x3-8L
Features and Benefits:
Advanced MOSFET process technology.
SSF4015 - P-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
-40V
RDS(on) 11mΩ (typ.)
ID －20A
TO-252 (D-PAK)
Features and Benefits
Advanced trench MOSFET process techno.
