SSF45N20B Datasheet - Fairchild Semiconductor

SSF45N20B 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSF45N20B Features

* 26.4A, 200V, RDS(on) = 0.065Ω @VGS = 10 V Low gate charge ( typical 133 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

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* G! G D S TO-3PF SSF Series ! S Absolute M

SSF45N20B Datasheet (678.63 KB)