SSF45N20B
Fairchild Semiconductor
678.63kb
200v n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
TAGS
📁 Related Datasheet
SSF45N20A - Advanced Power MOSFET
(Samsung Electronics)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
.D
t a
S a
e h
U 4 t e
m o .c
w
w
w
.D
at
h S a
t e e
4U
.
m o c
.
SSF4004 - MOSFET
(Silikron Semiconductor)
SSF4004
Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low .
SSF4004S - MOSFET
(Silikron Semiconductor)
Main Product Characteristics
VDSS
40V
RDS(on) 2.3mΩ (typ.)
ID 180A ①
Features and Benefits
TO-220
Advanced MOSFET process technology Specia.
SSF4006 - MOSFET
(Silikron Semiconductor)
SSF4006
Feathers:
ID =160A
Advanced trench process technology
BV=40V
avalanche energy, 100% test
Rdson=0.005Ω
Fully characterized avalanc.
SSF4008J7L - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
40V
RDS(on) 6.9mΩ(typ.)
ID
68A
PQFN 5x6-8L
Features and Benefits:
Advanced MOSFET process technology Spe.
SSF4008J8L - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
40V
RDS(on) 6.9mΩ (typ.)
ID
68A
PDFN 3*3-8L
Main Features
Advanced MOSFET process technology Special des.
SSF4013H1 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-40V
RDS(on) 11.6mΩ (typ.)
ID
-13A ①
SOP-8
Features and Benefits:
Advanced MOSFET process technology Spe.
SSF4013J7 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-40V
RDS(on) ID
10mΩ (typ.) -25A ①
PDFN 5x6-8L
SSF4013J7
Pin Assignments
Schematic Diagram
Features and Be.
SSF4013J8 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-40V
RDS(on) 11.6mΩ (typ.)
ID
-13A ①
PDFN 3x3-8L
Features and Benefits:
Advanced MOSFET process technology.
SSF4015 - P-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
-40V
RDS(on) 11mΩ (typ.)
ID －20A
TO-252 (D-PAK)
Features and Benefits
Advanced trench MOSFET process techno.
