SSF17N60A Datasheet - Fairchild Semiconductor

Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 0.356 Ω (Typ.) SSF17N60A BVDSS = 600 V RDS(on) = 0.45 Ω ID = 9 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Sou