SSF1016
SilikrON Semiconductor ↗ Co
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Power switching application. The SSF1016 is a new generation of high voltage and low current N –Channel enhancement mode trench power MOSFET. This
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SSF1010 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
100V
RDS(on) 9.5mohm(typ.) ID 100A
Features and Benefits:
TO220
Advanced .
SSF1010A - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
100V
RDS(on) 9.5mohm(typ.) ID 100A
Features and Benefits:
D2PAK
Advanced .
SSF1016A - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
100V
RDS(on) 13.8mohm(typ.)
ID 75A ①
Features and Benefits:
D2PAK
Advanc.
SSF1016D - MOSFET
(Silikron)
SSF1016D
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current
ID =60A BV.
SSF1006 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
100V 4.6mΩ (typ.)
ID 200A ①
Features and Benefits:
TO220
Advanced MOSFET process technology Speci.
SSF1006A - MOSFET
(Silikron)
SSF1006A
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current
ID =200A B.
SSF1006H - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
100V 5mΩ (typ.)
ID 200A ①
Features and Benefits:
TO-247
Advanced MOSFET process technology Specia.
SSF1007 - MOSFET
(Silikron)
Main Product Characteristics:
SSF1007
VDSS RDS(on)
ID
100V 5.8mohm（Typ）
130A
Features and Benefits:
SSF1007 TOP.
SSF1009 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
100V
RDS(on) 7.2mohm(typ.)
ID 100A
Features and Benefits:
TO220
Advanced MOSFET process technology Speci.
SSF1020 - Power switching application
(Silikron Semiconductor Co)
SSF1020
Feathers: Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized aval.
