SSF2301C
SilikrON Semiconductor ↗ Co
331.88kb
Pwm applications. The SSF2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as
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SSF2301 - PWM applications
(Silikron Semiconductor Co)
..
SSF2301
DESCRIPTION
The SSF2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with.
SSF2301A - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-20V
RDS(on) 39mΩ(typ.)
ID
-4A
SOT-23
Features and Benefits
◼ Advanced MOSFET process technology ◼ Special d.
SSF2301B - PWM applications
(Silikron Semiconductor Co)
SSF2301B
..
DESCRIPTION
The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit.
SSF2301B - 20V P-Channel MOSFET
(GOOD-ARK)
SSF2301B
20V P-Channel MOSFET
DESCRIPTION
The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wi.
SSF2301P - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-20V
RDS(on) 126mΩ (typ.)
ID
-2A
SOT-23
Features and Benefits:
Advanced MOSFET process technology Specia.
SSF2301UP - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-20V
RDS(on) 59mΩ(typ.)
ID
-2.6A
SOT-23
Features and Benefits
Advanced MOSFET process technology Special.
SSF2300 - 20V N-Channel MOSFET
(GOOD-ARK)
DESCRIPTION
The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V..
SSF2300 - MOSFET
(Silikron)
SSF2300
DESCRIPTION
The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low.
SSF2300A - Battery protection
(Silikron Semiconductor Co)
SSF2300A
..
DESCRIPTION
The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit.
SSF2300B - Battery protection
(Silikron Semiconductor Co)
SSF2300B
..
DESCRIPTION
The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit.