SSF7N60B Datasheet - Fairchild Semiconductor

SSF7N60B 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSF7N60B Features

* 5.4A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ! # " ! ! G! G D S TO-3PF SSF Series ! S Absolute Maximum Ratings Sy

SSF7N60B Datasheet (656.87 KB)