SSF7N60F
GOOD-ARK
1.11MB
600v n-channel mosfet. It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetiti
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SSF7N60 - N-Channel MOSFET
(SILIKRON)
SSF7N60
Features ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge min.
SSF7N60A - Advanced Power MOSFET
(Samsung Electronics)
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SSF7N60B - 600V N-Channel MOSFET
(Fairchild Semiconductor)
SSF7N60B
November 2001
SSF7N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produc.
SSF7N65F - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS RDS(on)
650V 1.26Ω (typ.)
ID 7A
Features and Benefits:
TO220F
Advanced Process Technology Special designe.
SSF7N80A - Advanced Power MOSFET
(Samsung Electronics)
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SSF7N90A - Advanced Power MOSFET
(Samsung Electronics)
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SSF7NS60D - 600V N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS RDS(on)
ID
600V 0.56Ω (typ.)
7A ①
Features and Benefits
High dv/dt and avalanche capabilities 100% avalanche .
SSF7NS60F - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics:
VDSS RDS(on)
600V 0.54Ω(typ.)
ID 7A ①
Features and Benefits:
Feathers: High dv/dt and avalanche capabilities 100.
SSF7NS65G - 650V N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS RDS(on)
ID
650V 0.58Ω (typ.)
7A ①
Features and Benefits
High dv/dt and avalanche capabilities 100% avalanche .
SSF7NS65UD - N-Channel MOSFET
(SILIKRON)
Main Product Characteristics
VDSS RDS(on)
650V 0.65Ω (typ.)
ID 7A ①
Features and Benefits
TO-252 (DPAK)
High dv/dt and avalanche capabilities .
