Description
SSF2116 20V N-Channel + P-Channel Complementary MOSFET Main Product Characteristics D1 D2 Polarity N-Ch VDSS RDS(ON)(Max.) 20V 40mΩ ID 3.8A P-.
The SSF2116 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for notebook, load switch, networking and hand-held devices
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
N-Channel
P-Channel
VDS Drain-Source Voltage
VGS Gate-Source Voltage Drain Current
* Continuous (TC=25°C
ID Drain Current
* Continuous (TC=100°C)
IDM Drain Current
* Pulsed1 Power Dissipa