SSF2116EJ3
Silikron
326.29kb
Mosfet. It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetit
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SSF2116 - 20V N-Channel + P-Channel Complementary MOSFET
(GOOD-ARK)
SSF2116
20V N-Channel + P-Channel Complementary MOSFET
Main Product Characteristics
D1 D2
Polarity
N-Ch
VDSS RDS(ON)(Max.)
20V 40mΩ
ID 3.8A
P-.
SSF2112H2 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
20V
RDS(on) 10mohm(typ.)
ID 8A
TSSOP-8
Features and Benefits:
Advanced tr.
SSF2102 - N-Ch Enhancement Mode Power MOSFET
(SeCoS)
Elektronische Bauelemente
SSF2102
2.1A , 20V , RDS(ON) 60 mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifi.
SSF2122E - 20V Dual N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
20V
RDS(on) 15.2mohm(typ.)
ID 7A ①
DFN 3x3-8L
Features and Benefits
Advanced MOSFET process technology Spe.
SSF2129H3 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
-20V 21mΩ (typ.)
ID -6.0A
Features and Benefits:
SOP-8
Advanced MOSFET process technology Special.
SSF2145CH6 - MOSFET
(Silikron)
Main Product Characteristics:
n-ch p-ch
VDSS
20V -20V
RDSon(typ.) 38mohm 64mohm
ID
4.8A
2.9A
SSF2145CH6
2145C
TSOP-6
Marking and pin Assign.
SSF2160G4 - 20V N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
20V
RDS(on) 28mohm(typ.)
ID 4.5A
SOT23-3
Features and Benefits
Advanced trench MOSFET process technology S.
SSF20K8NE-C - N-Channel Enhancement Mode Power MOSFET
(SeCoS)
Elektronische Bauelemente
SSF20K8NE-C
0.8A, 20V, RDS(ON) 350mΩ N-Channel Enhancement Mode Power MOSFET
FEATURES
20V/800mA RDS(ON)≦350mΩ@VGS=4.5V RDS.
SSF20N50UH - MOSFET
(Silikron)
Main Product Characteristics
VDSS RDS(on)
ID
500V 0.2Ω (typ.)
20A ①
Features and Benefits
TO-247
Advanced Process Technology Special designed.
SSF20N60H - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
600V
RDS(on) 0.2ohm(typ.)
ID 20A
Features and Benefits:
High dv/dt and avalanche capabilities 100% avalanc.