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SSF7509 - MOSFET
SSF7509 Main Product Characteristics: VDSS RDS(on) ID 75V 6.5mohm(typ.) 80A TO220 Marking and pin Assignment Schematic diagram Features and Benefits:.SSFD3004 - MOSFET
SSFD3004 DESCRIPTION The SSFD3004 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use a.2N7002KU - MOSFET
Main Product Characteristics: VDSS RDS(on) 60V 3Ω(max.) ID 0.3A SOT-23 Features and Benefits: Advanced MOSFET process technology Special des.2N7002KB - MOSFET
Main Product Characteristics: VDSS RDS(on) 60V 2Ω(max.) ID 0.3A SOT-23 Features and Benefits: Advanced MOSFET process technology Special des.SSF7508 - N-Channel MOSFET
Main Product Characteristics: VDSS RDS(on) 75V 6mΩ (typ.) ID 100A TO-220 Features and Benefits: Advanced MOSFET process technology Special d.SSFD3006 - MOSFET
Main Product Characteristics: VDSS 30V RDS(on) 3.8mΩ (typ.) ID 90A TO-252 (D-PAK) Features and Benefits: Ad.SSF7N65F - N-Channel MOSFET
Main Product Characteristics: VDSS RDS(on) 650V 1.26Ω (typ.) ID 7A Features and Benefits: TO220F Advanced Process Technology Special designe.SSF3055 - MOSFET
DESCRIPTION The SSF3055 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a Battery.SSF6808D3X - MOSFET
Main Product Characteristics: VDSS 60V RDS(on) 5.7mΩ (typ.) ID 80A TO-252 (DPAK) Features and Benefits: Advanced MOSFET process technology .SSF7509A - MOSFET
Main Product Characteristics: VDSS 75V RDS(on) 6.5mohm(typ.) ID 80A Features and Benefits: D2PAK Advanced tr.SSF3365 - MOSFET
SSF3365 DESCRIPTION The SSF3365 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low.SSF1090D - MOSFET
Main Product Characteristics: VDSS RDS(on) 100V 60mΩ (typ.) ID 15A ① TO-252 (D-PAK) Features and Benefits: Advanced MOSFET process technology .SSF8N65 - N-Channel MOSFET
SSF8N65 Features ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge min.SSPL2015D - N-Channel enhancement mode power field effect transistors
Main Product Characteristics VDSS RDS(on) 200V 0.13Ω(typ.) ID 18A ① Features and Benefits TO-252 Advanced Process Technology Special designe.SSPL7509 - N-Channel enhancement mode power field effect transistors
Main Product Characteristics: VDSS 75V RDS(on) 7.2mohm(typ.) ID 75A ① Features and Benefits: Advanced Process Technology Special designed for.SSTS20L60CTF - Schottky Barrier Rectifier
SSTS20L60CT/CTF Main Product Characteristics: IF VRRM Tj(max) Vf.SSF3904A - MOSFET
Main Product Characteristics: VDSS 30V RDS(on) 2.6mΩ (typ.) ID 120A Features and Benefits: TO263 Advanced M.SSF3339 - MOSFET
Main Product Characteristics: VDSS RDS(on) ID -30V 37mΩ (typ.) -4.1A ① SOT-23 Features and Benefits: Advanced MOSFET process technology Specia.SSF8509 - MOSFET
Main Product Characteristics: VDSS 85V RDS(on) ID 7mohm(typ.) 80A Features and Benefits: TO220 Advanced tre.SSF7504 - MOSFET
SSF7504 Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low .