SSFM8005 Overview
Description
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve extremely low on resistance, fast switching speed and short reverse recovery time. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM ISM PD @TC = 25°C PD @TC =100°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed D.
Key Features
- Advanced trench MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 175℃ operating temperature
