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SSF3611E, SSF3611E-GOOD P-Channel MOSFET

SSF3611E Description

Main Product Characteristics VDSS -30 V RDS(on) 10.6 mΩ(typ.) ID -12A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rati.

SSF3611E Features

* SOP-8
* Advanced trench MOSFET process technology

SSF3611E Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating temperature

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: SSF3611E, SSF3611E-GOOD. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
SSF3611E, SSF3611E-GOOD
Manufacturer
GOOD-ARK
File Size
357.29 KB
Datasheet
SSF3611E-GOOD-ARK.pdf
Description
P-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: SSF3611E, SSF3611E-GOOD.
Please refer to the document for exact specifications by model.

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P-Channel MOSFET GOOD-ARK
GOOD-ARK SSF3611E-like datasheet