SSF3612E Datasheet - GOOD-ARK

SSF3612E N-Channel MOSFET

The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by it.

SSF3612E Features

* VDS = 25V,ID = 11A RDS(ON) < 20mΩ @ VGS=4.0V RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=10V

* High Power and current handling capability

* Lead free product

* Surface Mount Package SSF3612E 25V N-Channel MOSFET Schematic Diagram Marking and Pin Assignment PACKAGE MARKING AND

SSF3612E Datasheet (453.21 KB)