SSF3611E MOSFET

Silikron Semiconductor

Description

Main Product Characteristics: VDSS -30 V RDS(on) 10.6 mΩ(typ.) ID -12A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.

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Datasheet Specifications

Part number: SSF3611E
Manufacturer: SilikrON Semiconductor ↗
File Size: 293.32 KB
Datasheet: SSF3611E-SilikronSemiconductor.pdf
Description: MOSFET

Features

* SOP-8
* Advanced trench MOSFET process technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

SSF3611E Distributors

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SSF3611E MOSFET Silikron Semiconductor

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