SSF3637

MOSFET

Silikron Semiconductor

SSF3637 Features

* VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V

* High Power and current handing capability

* Lead free product is acquired

* Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin Assignment Application

* Battery protection

SSF3637 General Description

The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V

* 25V). GENERAL FEATURES
*VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) <.

SSF3637 Datasheet (391.04 KB)