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SSF3639C MOSFET

SSF3639C Description

SSF3639C .
The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge.

SSF3639C Features

* N-Channel VDS = 30V,ID = 6.3A RDS(ON) < 35.5mΩ @ VGS=4.5V RDS(ON) < 22mΩ @ VGS=10V
* P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package N-channel P-ch

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MOSFET Silikron Semiconductor
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