SSF3639C

MOSFET

Silikron Semiconductor

SSF3639C Features

* N-Channel VDS = 30V,ID = 6.3A RDS(ON) < 35.5mΩ @ VGS=4.5V RDS(ON) < 22mΩ @ VGS=10V

* P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V

* High Power and current handing capability

* Lead free product is acquired

* Surface Mount Package N-channel P-ch

SSF3639C General Description

The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. GENERAL FEATURES
*N-Channel VDS = 30V,ID = 6.3A RDS(ON) < 35.5mΩ @ VGS=4.5V RDS(ON) < 22mΩ @ VGS=10V
*P-Chann.

SSF3639C Datasheet (287.67 KB)