SSF4N60D
GOOD-ARK
904.99kb
600v n-channel mosfet. It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive ava
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SSF4N60 - MOSFET
(Silikron)
SSF4N60
Features
■ Extremely high dv/dt capability
■ Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge min.
SSF4N60F - N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS RDS(on)
ID
600V 1.9Ω(typ.)
4A
TO-220F
Features and Benefits
Advanced MOSFET process technology Special desig.
SSF4N60F - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
VDSS RDS(on)
600V 1.9Ω(typ.)
ID 4A
Features and Benefits:
TO-220F
Advanced MOSFET process technology Special d.
SSF4N60G - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
VDSS RDS(on)
600V 1.85Ω (typ.)
ID 4A
Features and Benefits:
TO-251
Advanced MOSFET process technology Special .
SSF4N60G - N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
600V
RDS(on) 1.85Ω (typ.)
ID 4A Features and Benefits
TO-251
Advanced MOSFET process technology Special de.
SSF4N80AS - Advanced Power MOSFET
(Samsung Electronics)
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SSF4N90AS - Advanced Power MOSFET
(Samsung Electronics)
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SSF4NS60D - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
600V 1.1Ω (typ.)
ID 4A ①
Features and Benefits:
Feathers: High dv/dt and avalanche capabilities 100.
SSF4004 - MOSFET
(Silikron Semiconductor)
SSF4004
Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low .
SSF4004S - MOSFET
(Silikron Semiconductor)
Main Product Characteristics
VDSS
40V
RDS(on) 2.3mΩ (typ.)
ID 180A ①
Features and Benefits
TO-220
Advanced MOSFET process technology Specia.
