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SSF4N60G MOSFET

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Description

Main Product Characteristics: VDSS RDS(on) 600V 1.85Ω (typ.) ID 4A .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

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Features

* TO-251
* Advanced MOSFET process technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

SSF4N60G Distributors

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