SSF6010A
FEATURES
- Advanced trench process technology
- avalanche energy, 100% test
- Fully characterized avalanche voltage and current
- Lead free product
ID =75A BV=60V R DS (ON)=8mΩ (typ.)
DESCRIPTION
The SSF6010A is a new generation of middle voltage and high current N- Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6010A is assembled in high reliability and qualified assembly house.
APPLICATIONS
- Power switching application
SSF6010A Top View (D2PAK)
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V IDM Pulsed drain current ①
Power dissipation PD@TC=25ْC
Linear derating factor
VGS EAS EAR TJ TSTG
Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range
Max. 75 45 300 144 0.74 ±20 220 TBD
- 55 to +175
Units
W W/ْ C
V m J
ْC
Thermal...
