Description
Main Product Characteristics V(BR)DSS RDS(ON) ID 30V 18mΩ 28A SSFD3912 30V N-Channel MOSFET D S G .
The SSFD3912 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* TO-252 (DPAK)
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage Gate-Source Voltage
VDS 30 VGS ±20
Drain Current
* Continuous (TC=25°C)
Drain Current
* Continuous (TC=100°C) Drain Current
* Pulsed1 Single Pulse Avalanche Ener